Cleanroom
Class 1: Approximately 1,120 sq. ft. Includes Wafer Clean Room, Measurement Room, Central Clean Room, and Air Shower. Class 1000: Approximately 930 sq. ft. Includes Changing Room, North Grey Room, and South Grey Room.

Production Capacity
The fab can achieve a production rate of 800 wafers per day at 80% availability, based on a typical DCS process.

Geometries
The facility supports nanometer layers up to 140 microns across multiple customer geometries. It operates at temperatures ranging from 300 to 1190°C and pressures from 5 Torr to ATM across all tools.

Process Technologies
The fab utilizes various process technologies, including CMOS, Photonics, Silicon on Sapphire, Germanium on Silicon, Selective SiGe, SiGe, Selective Ge, Selective Silicon, Strained Silicon, and Ge on GaAs. It also supports in situ doping with AsH3, PH3, and B2H6 across a range of concentrations.

Year Built
The IQE facility was established in 2000. The staff collectively has over 100 years of semiconductor experience.

Equipment
The facility houses over 40 pieces of equipment, including five ASM E2000 RP Epi Reactors. Additionally, it has over 1,000 spare parts, including kits for each reactor to be configured for 100mm, 150mm, and 200mm wafer sizes.